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Silicon Junction FETs (Small Signal)
2SK0301 (2SK301)
Silicon N-Channel Junction FET
For low-frequency amplification For switching
5.00.2 5.10.2 4.00.2
unit: mm
I Features
13.50.5
G Low noies, high gain G High gate to drain voltage VGDO
0.45 -0.1
+0.2
0.45 -0.1
+0.2
I Absolute Maximum Ratings (Ta = 25C)
Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55 -55 -55 30 10 250 125 -55 to +125 Unit V V V mA mA mW C C
1.27
1.27
123
2.540.15
I Electrical Characteristics (Ta = 25C)
Parameter Drain to Source cut-off current Gate to Source leakage current Gate to Drain voltage Gate to Source cut-off voltage Mutual conductance Symbol IDSS* IGSS VGDC VGSC gm Conditions VDS = 10V, VGS = 0 VGS = -30V, VDS = 0 IG = -100A, VDS = 0 VDS = 10V, ID = 10A VDS = 10V, VGS = 0, f = 1kHz VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100k f = 100Hz 2.5 7.5 6.5 1.9 0.5 -55 -80 -5 min 1 typ max 20 -10 Unit mA nA V V mS pF pF dB
Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure NF
*
IDSS rank classification Runk IDSS (mA) P 1 to 3 Q 2 to 6.5 R 5 to 12 S 10 to 20
Note) The part number in the parenthesis shows conventional part number.
2.30.2
1: Drain 2: Gate 3: Source JEDEC: TO-92 EIAJ: SC-43 TO-92 Type Package
247
Silicon Junction FETs (Small Signal)
P D Ta
320 5 Ta=25C 280 4 8
2SK0301
I D V DS
10 Ta=25C
I D V DS
Allowable power dissipation PD (mW)
Drain current ID (mA)
200 160 120 80 40
Drain current ID (mA)
240
VGS=0V
3
VGS=0 - 0.2V
6
- 0.2V
- 0.4V 4 - 0.6V 2 - 0.8V - 1.0V
2
- 0.4V - 0.6V
1
- 0.8V -1.0V
- 1.2V 0 0.6 0 2 4 6 8 10 12
0 0 20 40 60 80 100 120 140 160
0 0 0.1 0.2 0.3 0.4 0.5
Ambient temperature Ta (C)
Drain to source voltage VDS (V)
Drain to source voltage VDS (V)
I D V GS
16 VDS=10V 14 12
g m VGS
12 VDS=10V Ta=25C
gm ID
VDS=10V Ta=25C
Mutual conductance gm (mS)
10
Mutual conductance gm (mS)
10
Drain current ID (mA)
12 10 8 6 4 75C 2 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2
8
8 IDSS=7.5mA
Ta=-25C 25C
6
6
4
4
2
2
0 -2.0
0 -1.6 -1.2 - 0.8 - 0.4 0 0 2 4 6 8 10
Gate to source voltage VGS (V)
Gate to source voltage VGS (V)
Drain current ID (mA)
C i s s V DS
Output capacitance (Common source) Coss (pF)
C oss V DS
VGS=0 Ta=25C VGS=0 Ta=25C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12
C rss V DS
Reverse transfer capacitance (Common source) Crss (pF)
8 VGS=0 Ta=25C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12
Input capacitance (Common source) Ciss (pF)
16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12
8
Drain to source voltage VDS (V)
Drain to source voltage VDS (V)
Drain to source voltage VDS (V)
248
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
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2001 MAR

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